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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3484
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The 2SK3484 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
? Low on-state resistance
R DS(on)1 = 125 m Ω MAX. (V GS = 10 V, I D = 8 A)
R DS(on)2 = 148 m Ω MAX. (V GS = 4.5 V, I D = 8 A)
? Low C iss : C iss = 900 pF TYP.
? Built-in gate protection diode
? TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
PART NUMBER
2SK3484
2SK3484-Z
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
(TO-251)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25°C)
V DSS
V GSS
I D(DC)
100
±20
±16
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
±22
A
Total Power Dissipation (T C = 25°C)
Total Power Dissipation (T A = 25°C)
Channel Temperature
Storage Temperature
P T1
P T2
T ch
T stg
30
1.0
150
–55 to +150
W
W
°C
°C
(TO-252)
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I AS
E AS
10
10
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Starting T ch = 25°C, V DD = 50 V, R G = 25 Ω, V GS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
4.17
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15069EJ3V0DS00 (3rd edition)
Date Published August 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2002
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相关代理商/技术参数
2SK3484-Z
制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET
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